30 0.3 20 0.3 |? 3 . 2 0 . 1 5 2.4 0.2 2.2 0.2 1.0 0.1 10 0.2 7.5 0.2 7.5 0.2 4.0 0.2 5.5 0.2 3.7 0.2 4.7 0.25 0.8 0.15 11.1 0.2 17.7 0.5 2.8 0.2 features ? ideal for printed circuit board ? reli a ble l o w c o s t c on s t r u c t i o n u t il i z i ng m olded plas tic technique maximum ratings and electrical characteristics ratings at 25 ?? ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. rbv 602 rbv 604 rbv 606 rbv 608 rbv 610 units maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v max imum rms v oltage v rms 140 280 420 560 700 v maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average forw ard output current @t c = 5 5 ?? peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load maximum instantaneous forw ard voltage at 3.0 a v f v maximum reverse current @t a = 2 5 ?? a at rated dc blocking voltage @t a = 100 ?? m a operating junction temperature range t j ?? storage temperature range t stg ?? RBV6005 - - - rbv610 rbv 6005 rbv 601 50 100 1 . 0 200 2 0 0 i (av) 6.0 silicon bridge rectifiers a 100 70 voltage range: 50 --- 1 000 v current: 6.0 a 35 50 kbj 6 ? s u r g e o v e r load r a t i ng: 20 0 a m pe r e s pe a k - 55 ---- + 150 - 55 -- - - + 1 50 i r i fsm a 10 dimensions in millimeters diode semiconductor korea www.diode.kr
.4 .6 .8 1.0 1.2 .01 0.1 1.0 1.6 .2 10 1.4 100 3 0 2 4 05 01 0 0 6 8 150 10 0 8 0 1 4 0 20ms 510 50 16 0 1 2 0 i fsm (a) 2 0 0 peak forward surge current, amperes average forward output current, amperes fi g. 1 -- peak forward surge current fi g. 3 -- typi cal forward characteri sti c amperes instantaneous forward current, RBV6005 - - - rbv610 number of cycles at 60h z ambient temperature, ?? fi g. 2 -- forward derati ng curve f o r w a r d v o l t a g e , v o l t s www.diode.kr diode semiconductor korea
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